Very high-speed metal-semiconductor-metal ultraviolet photodetectors fabricated on GaN
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.122448
Reference13 articles.
1. High quantum efficiency metal-semiconductor-metal ultraviolet photodetectors fabricated on single-crystal GaN epitaxial layers
2. Comprehensive characterization of metal–semiconductor–metal ultraviolet photodetectors fabricated on single-crystal GaN
3. Shallow and Deep Level Defects in GaN
4. Analysis of deep levels inn‐type GaN by transient capacitance methods
5. High speed, low noise ultraviolet photodetectors based on GaN p-i-n and AlGaN(p)-GaN(i)-GaN(n)structures
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