A simulation of doping and trap effects on the spectral response of AlGaN ultraviolet detectors
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference9 articles.
1. External quantum efficiency of Pt/n-GaN Schottky diodes in the spectral range 5–500nm
2. Modeling of the spectral response of AlxGa1−xN Schottky ultraviolet photodetectors
3. Performance Improvement of GaN Based Schottky Barrier Ultraviolet Photodetector by Adding a Thin AlGaN Window Layer
4. Temperature and compositional dependence of the energy band gap of AlGaN alloys
5. In situ optical monitoring of AlGaN thickness and composition during MOVPE growth of AlGaN/GaN microwave HFETs
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Stability, electronic and vibrational properties of GaAlN wurtzoid molecules and nanocrystals: A DFT study;Vacuum;2018-07
2. Simulation based comparative analysis of photoresponse in front- and back-illuminated GaN P-I-N ultraviolet photodetectors;SPIE Proceedings;2016-10-19
3. Improved two-dimensional responsivity physical model of a CMOS UV and blue-extended photodiode;Journal of Semiconductors;2014-09
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