Enhanced Light Extraction in AlInGaN UV Light-Emitting Diodes by an Embedded AlN/AlGaN Distributed Bragg Reflector
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/0256-307X/29/10/108501/pdf
Reference15 articles.
1. 1 mW AlInGaN-based ultraviolet light-emitting diode with an emission wavelength of 348 nm grown on sapphire substrate
2. Marked enhancement of 320–360 nm ultraviolet emission in quaternary InxAlyGa1−x−yN with In-segregation effect
3. Efficiency enhancement of InGaN/GaN light-emitting diodes with a back-surface distributed bragg reflector
4. High-reflectivity AlxGa1−xN∕AlyGa1−yN distributed Bragg reflectors with peak wavelength around 350nm
5. High-Reflectivity AlGaN/AlN Distributed Bragg Reflector in Ultraviolet Region
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1. In-situ mapping of electroluminescent enhancement of light-emitting diodes grown on patterned sapphire substrates;Journal of Applied Physics;2017-02-07
2. High-reflectance of hybrid reflector with distributed Bragg reflector and metal mirror for flip-chip ultra-violet light-emitting diodes;International Symposium on Optoelectronic Technology and Application 2014: Laser Materials Processing; and Micro/Nano Technologies;2014-12-18
3. High performance GaN-based LEDs on patterned sapphire substrate with patterned composite SiO_2/Al_2O_3 passivation layers and TiO_2/Al_2O_3 DBR backside reflector;Optics Express;2013-09-05
4. High-performance GaN-based light-emitting diodes on patterned sapphire substrate with a novel hybrid Ag mirror and atomic layer deposition-TiO2/Al2O3 distributed Bragg reflector backside reflector;Optical Engineering;2013-06-04
5. An Improvement on the Junction Temperature Measurement of Light-Emitting Diodes by using the Peak Shift Method Compared with the Forward Voltage Method;Chinese Physics Letters;2012-12
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