High-reflectivity AlxGa1−xN∕AlyGa1−yN distributed Bragg reflectors with peak wavelength around 350nm
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1766404
Reference20 articles.
1. 1 mW AlInGaN-based ultraviolet light-emitting diode with an emission wavelength of 348 nm grown on sapphire substrate
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3. MOCVD growth and optical investigation of the AlInGaN quaternary system
4. Lasing Emission from an In0.1Ga0.9N Vertical Cavity Surface Emitting Laser
5. Room-temperature photopumped InGaN/GaN/AlGaN vertical-cavity surface-emitting laser
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