1 mW AlInGaN-based ultraviolet light-emitting diode with an emission wavelength of 348 nm grown on sapphire substrate
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1510967
Reference7 articles.
1. Growth, spectroscopic and thermal behavior of Cd(SCN)2(DMSO)2
2. High-Performance 348 nm AlGaN/GaN-Based Ultraviolet-Light-Emitting Diode with a SiN Buffer Layer
3. Illumination characteristics of lighting array using 10 candela-class white LEDs under AC 100V operation
4. Efficient and high-power AlGaN-based ultraviolet light-emitting diode grown on bulk GaN
5. Investigation of the emission mechanism in InGaN/GaN-based light-emitting diodes
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