Metalorganic Chemical Vapor Deposition of over 150‐nm‐Thick Quaternary AlGaInN Epitaxial Films near Alloy Composition Lattice‐Matching to GaN on Sapphire and Their Structural and Optical Characterization-Reference-Cited by-同舟云学术

Metalorganic Chemical Vapor Deposition of over 150‐nm‐Thick Quaternary AlGaInN Epitaxial Films near Alloy Composition Lattice‐Matching to GaN on Sapphire and Their Structural and Optical Characterization

Published:2019-10-21 Issue:3 Volume:217 Page:1900597
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Miyoshi Makoto¹²^ORCID,Harada Hiroki¹,Egawa Takashi¹²,Takeuchi Tetsuya³

Affiliation:

1. Research Center for Nano Devices and Advanced MaterialsNagoya Institute of Technology Nagoya 466-8555 Japan

2. Innovation Center for Multi-Business of Nitride SemiconductorsNagoya Institute of Technology Nagoya 466-8555 Japan

3. Faculty of Science and TechnologyMeijo University Nagoya 468-8502 Japan

Funder

Ministry of Education, Culture, Sports, Science and Technology

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssa.201900597

Reference33 articles.

1. III–V nitride based light-emitting devices

2. Present status of InGaN/GaN/AlGaN-based laser diodes

3. Indium incorporation dynamics into AlInN ternary alloys for laser structures lattice matched to GaN

4. High performance red-emitting multiple layer InGaN/GaN quantum dot lasers

5. Blue laser diodes including lattice-matched Al0.83In0.17N bottom cladding layer

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Simulation analyses of carrier dynamics in npn-type GaN-heterojunction bipolar transistors with different hole-concentration p-base layers;Journal of Vacuum Science & Technology B;2023-09-01

2. Simulation Study on Novel GaN‐Based n−p−n Heterojunction Bipolar Transistors with a Quaternary AlGaInN Emitter and a Two‐Dimensionally Conductive Base;physica status solidi (a);2021-11-12

3. Epitaxial growth of 2.5-μm quaternary AlInGaN for n-cladding layer in GaN-based green laser diodes;Fundamental Research;2021-11

4. Current-induced degradation process in (In)AlGaN-based deep-UV light-emitting diode fabricated on AlN/sapphire template;Optical Materials;2020-11