GaN-Based Thin Film Vertical Structure Light Emitting Diodes Fabricated by a Modified Laser Lift-off Process and Transferred to Cu
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/0256-307X/27/12/127303/pdf
Reference14 articles.
1. Optical Process for Liftoff of Group III-Nitride Films
2. Damage-free separation of GaN thin films from sapphire substrates
3. InxGa1−xN light emitting diodes on Si substrates fabricated by Pd–In metal bonding and laser lift-off
4. Fabrication of Large-Area GaN-Based Light-Emitting Diodes on Cu Substrate
5. Comparison of p-Side Down and p-Side Up GaN Light-Emitting Diodes Fabricated by Laser Lift-Off
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1. A review of key technologies for epitaxy and chip process of micro light-emitting diodes in display application;Acta Physica Sinica;2020
2. GaN-based light-emitting diodes on various substrates: a critical review;Reports on Progress in Physics;2016-04-08
3. Effect of wafer bonding and laser liftoff process on residual stress of GaN-based vertical light emitting diode chips;Acta Physica Sinica;2015
4. A new system for achieving high-quality nonpolar m-plane GaN-based light-emitting diode wafers;J. Mater. Chem. C;2014
5. Synthesis of homogeneous and high-quality GaN films on Cu(111) substrates by pulsed laser deposition;CrystEngComm;2014
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