Selective Area Growth of GaAs in V-Grooved Trenches on Si(001) Substrates by Aspect-Ratio Trapping
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/0256-307X/32/2/028101/pdf
Reference21 articles.
1. Defect reduction of GaAs epitaxy on Si (001) using selective aspect ratio trapping
2. Monolithic integration of GaAs light‐emitting diodes and Si metal‐oxide‐semiconductor field‐effect transistors
3. Selective area growth of high quality InP on Si (001) substrates
4. Control of structural defects in group III V N alloys grown on Si
5. Antiphase boundaries in GaAs layers on Si and Ge
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1. Principles of Selective Area Epitaxy and Applications in III–V Semiconductor Lasers Using MOCVD: A Review;Crystals;2022-07-21
2. Selective Growth of Energy-Band-Controllable In1−xGaxAsyP1−y Submicron Wires in V-Shaped Trench on Si;Crystals;2022-03-30
3. Thermal stress reduction of GaAs epitaxial growth on V-groove patterned Si substrates*;Chinese Physics B;2021-01-01
4. Selective area epitaxy by metalorganic chemical vapor deposition– a tool for photonic and novel nanostructure integration;Progress in Quantum Electronics;2021-01
5. State of the Art and Future Perspectives in Advanced CMOS Technology;Nanomaterials;2020-08-07
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