The Influence of Graded AlGaN Buffer Thickness for Crack-Free GaN on Si(111) Substrates by using MOCVD
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/0256-307X/30/2/028101/pdf
Reference24 articles.
1. Electron transport in AlGaN–GaN heterostructures grown on 6H–SiC substrates
2. Growth of high crystalline quality semi-insulating GaN layers for high electron mobility transistor applications
3. Growth of blue GaN LED structures on 150-mm Si(111)
4. Growth of high quality GaN layers with AlN buffer on Si(111) substrates
5. Stress and Defect Control in GaN Using Low Temperature Interlayers
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1. Improving Epitaxial Growth of γ‐Al2O3 Films via Sc2O3/Y2O3 Oxide Buffers;physica status solidi (a);2024-05-27
2. Enhancement of gallium nitride on silicon (111) using pulse atomic-layer epitaxy (PALE) AlN with composition-graded AlGaN buffer;Scientific Reports;2023-05-31
3. Design of step-graded AlGaN buffers for GaN-on-Si heterostructures grown by MOCVD;Semiconductor Science and Technology;2023-02-22
4. Selectively Enhanced UV-A Photoresponsivity of a GaN MSM UV Photodetector with a Step-Graded AlxGa1−xN Buffer Layer;Sensors;2017-07-21
5. Investigations of atomic configurations of 60° basal dislocations in wurtzite GaN film by high-resolution transmission electron microscopy;Philosophical Magazine Letters;2016-04-02
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