Selectively Enhanced UV-A Photoresponsivity of a GaN MSM UV Photodetector with a Step-Graded AlxGa1−xN Buffer Layer-Reference-Cited by-同舟云学术

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Selectively Enhanced UV-A Photoresponsivity of a GaN MSM UV Photodetector with a Step-Graded AlxGa1−xN Buffer Layer

Published:2017-07-21 Issue:7 Volume:17 Page:1684
ISSN:1424-8220
Container-title:Sensors
language:en
Short-container-title:Sensors

Author:

Lee Chang-Ju,Won Chul-Ho,Lee Jung-Hee,Hahm Sung-Ho,Park Hongsik

Publisher

MDPI AG

Subject

Electrical and Electronic Engineering,Biochemistry,Instrumentation,Atomic and Molecular Physics, and Optics,Analytical Chemistry

Link

http://www.mdpi.com/1424-8220/17/7/1684/pdf

Reference31 articles.

1. Semiconductor ultraviolet detectors

2. The Development of Nitride-based UV Photodetectors;Walker;Opto-Elec. Rev.,2000

3. Al Ga1−N for solar-blind UV detectors

4. Solar-blind AlGaN-based p-i-n photodetectors with high breakdown voltage and detectivity

5. High-performance visible-blind GaN-based p-i-n photodetectors

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