Optical Properties of Phase-Separated GaN 1− x P x Alloys Grown by Light-Radiation Heating Metal-Organic Chemical Vapour Deposition
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Reference9 articles.
1. Gas source MBE growth of GaN rich side of GaN1 − P using ion-removed ECR radical cell
2. Optical properties of GaN-rich side of GaNP and GaNAs alloys grown by gas-source molecular beam epitaxy
3. Raman studies of phosphorus incorporation in GaN1−xPx alloys
4. Microstructures of GaN1−xPx layers grown on (0001) GaN substrates by gas source molecular beam epitaxy
5. Gas Source Molecular Beam Epitaxial Growth of GaN$_{{\bf 1}-{\ninmbi x}}$P x ($\mbi{x} \Leq {\bf 0.015}$) Using Ion-Removed Electron Cyclotron Resonance Radical Cell
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Bandgap engineering in III-nitrides with boron and group V elements: Toward applications in ultraviolet emitters;Applied Physics Reviews;2020-12
2. Wurtzite AlP y N1−y : a new III-V compound semiconductor lattice-matched to GaN (0001);Applied Physics Express;2020-10-09
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