Optical Performance of N-Face AlGaN Ultraviolet Light Emitting Diodes
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/0256-307X/31/10/108502/pdf
Reference21 articles.
1. Deep-Ultraviolet Light-Emitting Diodes
2. Enhancement of surface emission in deep ultraviolet AlGaN-based light emitting diodes with staggered quantum wells
3. Auger recombination in InGaN measured by photoluminescence
4. Origin of efficiency droop in GaN-based light-emitting diodes
5. Polarization-matched GaInN∕AlGaInN multi-quantum-well light-emitting diodes with reduced efficiency droop
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1. Recent advances and challenges in AlGaN-based ultra-violet light emitting diode technologies;Materials Research Bulletin;2021-08
2. Double superlattice structure for improving the performance of ultraviolet light-emitting diodes;Chinese Physics B;2019-03
3. Improvement of AlGaN-based deep ultraviolet light-emitting diodes by using a graded AlGaN superlattice hole reservoir layer;Optical Materials;2018-12
4. Determination of N-polar AlN/GaN heterojunction valance-band offsets by X-ray photoelectron spectroscopy;Materials Letters;2018-11
5. Performance enhancement of AlGaN-based UV-LEDs inserted with a pin-doped AlGaN layer between the active region and electron-blocking layer;Materials Science in Semiconductor Processing;2018-08
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