Enhancement of surface emission in deep ultraviolet AlGaN-based light emitting diodes with staggered quantum wells-Reference-Cited by-同舟云学术

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Enhancement of surface emission in deep ultraviolet AlGaN-based light emitting diodes with staggered quantum wells

Published:2012-08-30 Issue:17 Volume:37 Page:3693
ISSN:0146-9592
Container-title:Optics Letters
language:en
Short-container-title:Opt. Lett.

Author:

Lu Huimin,Yu Tongjun,Yuan Gangcheng,Chen Xinjuan,Chen Zhizhong,Chen Genxiang,Zhang Guoyi

Funder

National Key Basic Research Program of China

National High-Tech Research and Development Program of China

National Natural Science Foundation of China

Publisher

The Optical Society

Subject

Atomic and Molecular Physics, and Optics

Reference25 articles.

1. 250nmAlGaN light-emitting diodes

2. 231–261nm AlGaN deep-ultraviolet light-emitting diodes fabricated on AlN multilayer buffers grown by ammonia pulse-flow method on sapphire

3. Unique optical properties of AlGaN alloys and related ultraviolet emitters

4. Anisotropic polarization characteristics of lasing and spontaneous surface and edge emissions from deep-ultraviolet (λ≈240nm) AlGaN multiple-quantum-well lasers

5. Optical polarization characteristics of ultraviolet (In)(Al)GaN multiple quantum well light emitting diodes

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1. Tuning the Photoluminescence Anisotropy of Semiconductor Nanocrystals;ACS Nano;2023-09-25

2. Valence subbands profile regulation in AlGaN quantum well based on k·p theory;Physica Scripta;2023-02-15

3. Is a thin p-GaN layer possible for making high-efficiency AlGaN-based deep-ultraviolet light-emitting diodes?;Optics Express;2021-08-30

4. Remarkably improved photoelectric performance of AlGaN-based deep ultraviolet luminescence by using dual-triangle quantum barriers;Optics Communications;2021-01

5. Joint evaluation of internal quantum efficiency and light extraction efficiency for AlGaN-based deep ultraviolet LEDs considering optical polarization properties;Journal of Applied Physics;2020-09-28

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