Is a thin p-GaN layer possible for making high-efficiency AlGaN-based deep-ultraviolet light-emitting diodes?-Reference-Cited by-同舟云学术

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Is a thin p-GaN layer possible for making high-efficiency AlGaN-based deep-ultraviolet light-emitting diodes?

Published:2021-08-30 Issue:19 Volume:29 Page:29651
ISSN:1094-4087
Container-title:Optics Express
language:en
Short-container-title:Opt. Express

Author:

Wang Weidong,Chu Chunshuang,Che Jiamang,Hang Sheng,Shao Hua,Tian Kangkai,Zhang Yonghui,Zhang Zi-Hui

Funder

National Natural Science Foundation of China

Natural Science Foundation of Hebei Province

research fund by State Key Laboratory of Reliability and Intelligence of Electrical Equipment, Hebei University of Technology

Publisher

The Optical Society

Subject

Atomic and Molecular Physics, and Optics

Reference26 articles.

1. Band engineering of III-nitride-based deep-ultraviolet light-emitting diodes: a review

2. The Minamata Convention on Mercury: A First Step toward Protecting Future Generations

3. A Critical Review on Ultraviolet Disinfection Systems against COVID-19 Outbreak: Applicability, Validation, and Safety Considerations

4. The emergence and prospects of deep-ultraviolet light-emitting diode technologies

5. Deep-ultraviolet light-emitting diodes with external quantum efficiency higher than 20% at 275 nm achieved by improving light-extraction efficiency

Cited by 20 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of p-GaN layer and High-k material in InGaN/GaN LED for optical performance enhancement;Journal of Optics;2024-07-30

2. The composited high reflectivity p-type electrodes with patterned ITO for AlGaN-based ultraviolet light emitting diodes;Applied Physics Letters;2024-07-01

3. Low Leakage and High Gain GaN p-i-n Avalanche Photodiode With Shallow Bevel Mesa Edge Termination and Recessed Window;IEEE Transactions on Electron Devices;2024-06

4. Metal-modulated epitaxy of Mg-doped Al_0.80In_0.20N-based layer for application as the electron blocking layer in deep ultraviolet light-emitting diodes;Journal of Semiconductors;2024-05-01

5. Is It Possible to Make Thin p-GaN Layer for AlGaN-Based Deep Ultraviolet Micro Light Emitting Diodes?;IEEE Electron Device Letters;2024-03

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