Effects of scaling on the impact ionization and sub‐threshold current in submicron MOSFETs-Reference-Cited by-同舟云学术

Effects of scaling on the impact ionization and sub‐threshold current in submicron MOSFETs

Published:2007-12-28 Issue:1 Volume:25 Page:41-45
ISSN:1356-5362
Container-title:Microelectronics International
language:en
Short-container-title:Microelectronics International

Author:

Jharia Bhavana¹,Sarkar S.²,Agarwal R.P.³

Affiliation:

1. Department of Electronics and Computer Engineering, Indian Institute of Technology Roorke, Roorke, India

2. Modi Institute of Technology and Science, Sikar, India

3. Bundelkhand University, Jhansi, India

Publisher

Emerald

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference16 articles.

1. A detailed experimental investigation of impact ionization in n-channel metal–oxide–semiconductor field-effect-transistors at very low drain voltages

2. Generalized scaling theory and its application to a ¼ micrometer MOSFET design

3. CMOS scaling for high performance and low power-the next ten years

4. Full-band Monte Carlo investigation of hot carrier trends in the scaling of metal-oxide-semiconductor field-effect transistors

5. Fiegna, C., Iwai, H., Wada, T., Saito, T., Sangiorgi, E. and Ricco, B. (1992), “A new scaling methodology for the 0.1–0.025 μm MOSFET”, Proceedings of the Symposium on VLSI Technology, p. 33.

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