VDMOSFET reliability dependence on the integrated drain‐source junction

Abstract

PurposeThis work aims to investigate the modifications in a transistor behavior after hot carrier injection processes from the integrated junction.Design/methodology/approachA high voltage is applied across the drain‐source contacts, so a reverse current is induced through the integrated junction and defects are then created.FindingsThe results point out to a dependence of the VDMOSFET reliability on the operating conditions which could induce parasitic effects on the structure. Induced defects alter the form of several MOSFET characteristics.Originality/valueA new method of degradation is presented along with a series of characterization techniques‐based electrical parameters variations.