Quasi-saturation capacitance behavior of a DMOS device
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx1/16/13045/00595939.pdf?arnumber=595939
Cited by 18 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Temperature Dependence of the Channel and Drift Resistance of SiC Power MOSFETs Extracted from I-V and C-V Measurements;Materials Science Forum;2023-06-06
2. Gate Capacitance Characterization of Silicon Carbide and Silicon Power mosfets Revisited;IEEE Transactions on Power Electronics;2022-09
3. Temperature Dependence of On-State Inter-Terminal Capacitances (C<sub>gd</sub> and C<sub>gs</sub>) of SiC MOSFETs and Frequency Limitations of their Measurements;Materials Science Forum;2022-05-31
4. Process and performance optimization of Triple‐RESURF LDMOS with Trenched‐Gate;International Journal of RF and Microwave Computer-Aided Engineering;2021-08-10
5. Part II: RF, ESD, HCI, SOA, and Self Heating Concerns in LDMOS Devices Versus Quasi-Saturation;IEEE Transactions on Electron Devices;2018-01
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