Gate Capacitance Characterization of Silicon Carbide and Silicon Power mosfets Revisited-Reference-Cited by-同舟云学术

Gate Capacitance Characterization of Silicon Carbide and Silicon Power mosfets Revisited

Published:2022-09 Issue:9 Volume:37 Page:10572-10584
ISSN:0885-8993
Container-title:IEEE Transactions on Power Electronics
language:
Short-container-title:IEEE Trans. Power Electron.

Author:

Stark Roger¹^ORCID,Tsibizov Alexander¹^ORCID,Kovacevic-Badstuebner Ivana¹^ORCID,Ziemann Thomas¹^ORCID,Grossner Ulrike¹^ORCID

Affiliation:

1. Advanced Power Semiconductor Laboratory, ETH Zurich, Zurich, Switzerland

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx7/63/9780877/09748029.pdf?arnumber=9748029

Reference44 articles.

1. Temperature dependence of on-state inter-terminal capacitances (CGD and CGS) of SiC MOSFETs and frequency limitations of their measurements;tsibizov;Mater Sci Forum,2021

2. Design Consideration of Low Capacitance SiC JMOS for Adapting High-Speed Operation

3. The parametric measurement handbook 4th edition;wadsworth,2018

4. A Novel Characterization Technique to Extract High Voltage - High Current IV Characteristics of Power MOSFETs from Dynamic Measurements

5. Characterization of power transistors intrinsic parasitics based on 2-Port S-parameter measurements

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