Gate-Source-Dependent Soft- and Hard-Switching Losses of 1200V SiC MOSFETs Utilizing Heatsinkless Calorimetric Measurements Based on Optical Sensors
Author:
Affiliation:
1. University of Stuttgart,Institute of Robust Power Semiconductor Systems,Stuttgart,Germany
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10509012/10509018/10509381.pdf?arnumber=10509381
Reference20 articles.
1. Driven by Density, Efficiency at Low Cost, Power Integration Reaches New Heights: PSiPs and PwrSoCs are growing faster than the traditional power supplies
2. Towards virtual prototyping and comprehensive multi-objective optimisation in power electronics;Biela,2010
3. Characterisation of 1200V, 35A SiC Mosfet using double pulse circuit
4. A Cost-effective, Compact, Automatic Testing System for Dynamic Characterization of Power Semiconductor Devices
5. Fully Modular, Dynamic SiC and GaN Testbench with Automated Temperature and Gate-Voltage Characterization
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