Characterisation of 1200V, 35A SiC Mosfet using double pulse circuit-Reference-Cited by-同舟云学术

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Characterisation of 1200V, 35A SiC Mosfet using double pulse circuit

Published:2016-12 Issue: Volume: Page:
ISSN:
Container-title:2016 IEEE International Conference on Power Electronics, Drives and Energy Systems (PEDES)
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Author:

Ganesan P ,Manju R ,Razila K R ,Vijayan Rinu J

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/7905200/7914213/07914225.pdf?arnumber=7914225

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Gate-Source-Dependent Soft- and Hard-Switching Losses of 1200V SiC MOSFETs Utilizing Heatsinkless Calorimetric Measurements Based on Optical Sensors;2024 IEEE Applied Power Electronics Conference and Exposition (APEC);2024-02-25

2. Fully Modular, Dynamic SiC and GaN Testbench with Automated Temperature and Gate-Voltage Characterization;2023 IEEE Design Methodologies Conference (DMC);2023-09-24

3. A Comprehensive Guide for Optimizing the switching of an Automotive Grade MOSFET in a Half-Bridge Topology;2023 International Conference on Control, Communication and Computing (ICCC);2023-05-19

4. Switching characterization of Si, SiC and GaN power devices based on double pulse test using LTSPICE;RECENT ADVANCES IN INDUSTRY 4.0 TECHNOLOGIES;2023

5. Switching Losses Minimization Method for EV Inverter with Individual Sequential Gating of Parallel-Connected Switches;Journal of Electrical Engineering & Technology;2022-06-07

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