Atom-Probe-Tomographic Studies on Silicon-Based Semiconductor Devices

Abstract

The development of laser-assisted atom probe tomography (APT) and specimen preparation techniques using a focused ion beam equipped with high-resolution scanning electron microscopy (SEM) has significantly advanced the characterization of semiconductor devices by APT. The capability of APT to map out elements in devices at the atomic scale with high sensitivity meets the characterization requirements of semiconductor devices such as the determination of elemental distributions for each device region.