Author:
Kambham A.K.,Mody J.,Gilbert M.,Koelling S.,Vandervorst W.
Subject
Instrumentation,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference22 articles.
1. Enhanced Performance of PMOS MUGFET via Integration of Conformal Plasma-Doped Source/Drain Extensions
2. Doping fin field-effect transistor sidewalls: Impurity dose retention in silicon due to high angle incident ion implants and the impact on device performance
3. On the FinFET extension implant energy
4. J. Mody, P. Eyben, W. Polspoel, M. Jurczak, W. Vandervorst, Doping engineering for front-end processing, in: B.J. Pawlak, M.L. Pelaz, M. Law, K. Suguro (Eds.) MRS Symposia Proceedings no. 1070, Materials Research Society, Warrendale, PA, 2008, Paper No. 1070-E01-11.
Cited by
44 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献