Atom-probe for FinFET dopant characterization

Author:

Kambham A.K.,Mody J.,Gilbert M.,Koelling S.,Vandervorst W.

Publisher

Elsevier BV

Subject

Instrumentation,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference22 articles.

1. Enhanced Performance of PMOS MUGFET via Integration of Conformal Plasma-Doped Source/Drain Extensions

2. Doping fin field-effect transistor sidewalls: Impurity dose retention in silicon due to high angle incident ion implants and the impact on device performance

3. On the FinFET extension implant energy

4. J. Mody, P. Eyben, W. Polspoel, M. Jurczak, W. Vandervorst, Doping engineering for front-end processing, in: B.J. Pawlak, M.L. Pelaz, M. Law, K. Suguro (Eds.) MRS Symposia Proceedings no. 1070, Materials Research Society, Warrendale, PA, 2008, Paper No. 1070-E01-11.

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2. Influence of oxygen on copper gettering in hydrocarbon molecular ion implanted region using atom probe tomography;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2020-09

3. Site-Specific Sample Preparation and Analysis of FinFET structure in 14nm Technology Node Chip via Atom Probe Tomography;2020 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA);2020-07-20

4. Conformal doping strategy for fin structures: tailoring of dopant profile through multiple monolayer doping and capping layer control;Semiconductor Science and Technology;2020-04-03

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