Dual Lens Electron Holography, Scanning Capacitance Microscopy (SCM), Scanning Spreading Resistance Microscopy (SSRM) Comparison for Semiconductor 2-D Junction Characterization-Reference-Cited by-同舟云学术

Dual Lens Electron Holography, Scanning Capacitance Microscopy (SCM), Scanning Spreading Resistance Microscopy (SSRM) Comparison for Semiconductor 2-D Junction Characterization

Published:2021-05 Issue:3 Volume:29 Page:36-44
ISSN:1551-9295
Container-title:Microscopy Today
language:en
Short-container-title:Micros. Today

Author:

Wang Y.Y.,Nxumalo J.,Zhao W.,Bandy K.,Nummy K.

Abstract

Publisher

Cambridge University Press (CUP)

Subject

General Medicine

Reference26 articles.

1. Junction profiling on hot carrier stressed device by dual lens electron holography and scanning capacitance microscopy

2. Characterizing junction profiles in Ge photodetectors using scanning capacitance microscopy (SCM) and electron holography

3. Wang, YY , Electron holography method. US Patent 7,015,469 B2 (2006).

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