Affiliation:
1. Micron Technology Inc. , 8000 S. Federal Way, Boise, Idaho 83716
Abstract
Junction profiles of hot electron stressed high-voltage N-channel field effect transistor (NFET) devices were measured by scanning capacitance microscopy. Deactivation of phosphorous was observed on the drain side. To directly establish a link between phosphorus deactivation and hydrogen, junction profiles were measured on an unstressed NFET (N-type metal-oxide-semiconductor) device with and without H2 plasma treatment and with subsequent 400 °C annealing in helium. Phosphorus deactivation was observed in the device after H2 plasma treatment, while subsequent 400 °C annealing led to dissociation of the P–H (or H–Si–P) bond and recovery of the device junctions.
Subject
Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Process Chemistry and Technology,Instrumentation,Electronic, Optical and Magnetic Materials