Author:
Wang Yun-Yu,Yuan Renliang,Wang Shixin,Wang Zhouguang,Jin Qiang
Abstract
Abstract:The internal electric field of a 2D P-N junction of a semiconductor is mapped out by two techniques: measuring the deflection of the transmitted beam in micro-STEM mode with acquisition and data fitting of an un-scattered beam image, and through the derivative of electrostatic potential maps by dual lens electron holography. Comparable results of the P-N junction internal electric field measured with these two techniques are reported.
Publisher
Oxford University Press (OUP)
Cited by
4 articles.
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