High-Contrast Visualization of Anti-Phase Domains and Screw Dislocations in 3C-SiC
Author:
Publisher
Cambridge University Press (CUP)
Subject
Instrumentation
Reference7 articles.
1. Diffraction contrast and Bragg reflection determination in forescattered electron channeling contrast images of threading screw dislocations in 4H-SiC
2. Electron Back Scattering Diffraction (EBSD) as a Tool for the Investigation of 3C-SiC Nucleation and Growth on 6H or 4H
3. Site-Specific TEM Specimen Preparation of Samples with Sub-Surface Features
4. A step-by-step experiment of 3C-SiC hetero-epitaxial growth on 4H-SiC by CVD
5. Chemical vapor deposition and characterization of 6H‐SiC thin films on off‐axis 6H‐SiC substrates
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. 3C-SiC Island Growth on 4H-Sic Terraces: Statistical Evidence for the Orientation Selection Rule;Solid State Phenomena;2023-06-06
2. Electron/Ion Channeling Contrast Imaging and Grayscale Image Analysis Using 3C-SiC Twin Structures;Microscopy and Microanalysis;2018-08
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