Diffraction contrast and Bragg reflection determination in forescattered electron channeling contrast images of threading screw dislocations in 4H-SiC
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3042224
Reference25 articles.
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3. A dynamical theory for the contrast of perfect and imperfect crystals in the scanning electron microscope using backscattered electrons
4. Scanning electron microscopy imaging of dislocations in bulk materials, using electron channeling contrast
5. Electron backscatter diffraction and electron channeling contrast imaging of tilt and dislocations in nitride thin films
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1. Multi-microscopy characterization of threading dislocations in CVD-grown diamond films;Applied Physics Letters;2024-03-04
2. Observation and quantitative analysis of dislocations in steel using electron channeling contrast imaging method with precise control of electron beam incident direction;Microscopy;2023-12-19
3. Observation of threading dislocations and misfit dislocation half-loops in GaN/AlGaN heterostructures grown on Si using electron channeling contrast imaging;Journal of Applied Physics;2022-09-14
4. The Origin and Formation Mechanism of an Inclined Line‐like Defect in 4H‐SiC Epilayers;physica status solidi (b);2022-01-22
5. Quantitative analysis of electron channeling contrast of dislocations;Ultramicroscopy;2019-11
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