The effects of surface stress relaxation on electron channelling contrast images of dislocations-Reference-Cited by-同舟云学术

The effects of surface stress relaxation on electron channelling contrast images of dislocations

Published:1995-07 Issue:1 Volume:72 Page:81-103
ISSN:0141-8610
Container-title:Philosophical Magazine A
language:en
Short-container-title:Philosophical Magazine A

Author:

Wilkinson Angus J.,Hirsch Peter B.

Publisher

Informa UK Limited

Subject

Metals and Alloys,Physics and Astronomy (miscellaneous),Condensed Matter Physics,General Materials Science,Electronic, Optical and Magnetic Materials

Link

http://www.tandfonline.com/doi/pdf/10.1080/01418619508239583

Reference17 articles.

1. Calculations of lattice defect images for scanning electron microscopy

2. Imaging of dislocations using backscattered electrons in a scanning electron microscope

3. Dudarev, S. D., Wilkinson, A. J., Rez, P., Czernuszka, J. T. and Whelan, M. J. Proceedings of the International Congress on Electron Microscopy. 1993, Paris. pp.353Les Ulis: Les Editions de Physique.

4. Dislocation nucleation near the critical thickness in GeSi/Si strained layers

5. The Continuum Theory of Lattice Defects

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