A step-by-step experiment of 3C-SiC hetero-epitaxial growth on 4H-SiC by CVD-Reference-Cited by-同舟云学术

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A step-by-step experiment of 3C-SiC hetero-epitaxial growth on 4H-SiC by CVD

Published:2015-12 Issue: Volume:357 Page:985-993
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Xin Bin^ORCID,Jia Ren-Xu,Hu Ji-Chao,Tsai Cheng-Ying,Lin Hao-Hsiung,Zhang Yu-Ming

Funder

National Natural Science Foundation, China

Science Project of State Grid, China

Ministry of Science and Technology, Taiwan

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference30 articles.

1. High-temperature electronics: a role for wide bandgap semiconductors?;Neudeck;Proc. IEEE,2002

2. Metal Schottky barrier contacts to alpha 6H-SiC;Waldrop;J. Appl. Phys.,1992

3. Calculated ground-state properties of silicon carbide;Churcher;J. Phys. C: Solid State Phys.,1986

4. Artificially layered heteropolytypic structures based on SiC polytypes: molecular beam epitaxy, characterization and properties;Fissel;Phys. Rep.,2003

5. Investigation of the structure of (p)3C-SiC-(n)6H-SiC heterojunctions;Lebedev;Tech. Phys. Lett.,2001

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