Author:
Peletier L. A.,Troy W. C.
Abstract
We study the development of concentration profiles in a semi-infinite slab of semiconductor material after impurities have been implanted uniformly through the slab, under the assumption that, at the face of the slab, no impurities can pass and the vacancy concentration is kept at its equilibrium value. It is shown that profiles of self-similar form exist, and their qualitative shape, as well as their asymptotic properties far from the face of the slab, are determined.
Publisher
Cambridge University Press (CUP)
Cited by
2 articles.
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