Author:
Peletier L. A.,Troy W. C.
Publisher
Springer Science and Business Media LLC
Subject
Mechanical Engineering,Mathematics (miscellaneous),Analysis
Reference4 articles.
1. Hearne, M. T., Diffusion models for the doping of semi-conductor crystals, Ph. D. thesis, Nottingham University, England, 1988.
2. King, J. R., Mathematical analysis of a model for substitutional diffusion, Proc. R. Soc. Lond. A. 430 (1990) 377?404.
3. McLeod, J. B. & J. Serrin, The existence of similar solutions for some laminar boundary layer problems, Arch. Rational Mech. Anal. 31 (1968) 288?303.
4. Zahari, M. D. & B. Tuck, Effect of vacancy reduction on diffusion in semiconductors, J. Phys. D 15 (1982) 1741?1750.
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