Discrete-time methods for equations modelling transport of foreign-atoms in semiconductors

Author:

Glitzky Annegret,Gröger Konrad,Hünlich Rolf

Publisher

Elsevier BV

Subject

Applied Mathematics,Analysis

Reference25 articles.

1. Existence, uniqueness and asymptotic behaviour of solutions to equations modelling transport of dopants in semiconductors;Glitzky,1994

2. Point defects and dopant diffusion in silicon;Fahey;Rev. Mod. Phys.,1989

3. On the Coupled Diffusion of Dopants and Silicon Point Defects;Höfler;ETH Integrated Systems Laboratory (Technical Report 94/13),1994

4. Diffusion in silicon and germanium;Frank,1984

5. Mechanism and kinetics of the diffusion of gold in silicon;Gösele;Appl. Phys.,1980

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1. Electro-Reaction-Diffusion Systems Including Cluster Reactions of Higher Order;Mathematische Nachrichten;2000-08

2. Global estimates and asymptotics for electro reaction diffusion systems in heterostructures;Applicable Analysis;1997-09

3. Energetic Estimates and Asymptotics for Electro-Reaction-Diffusion Systems;ZAMM - Journal of Applied Mathematics and Mechanics / Zeitschrift für Angewandte Mathematik und Mechanik;1997

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