Mechanism and kinetics of the diffusion of gold in silicon
Author:
Publisher
Springer Science and Business Media LLC
Subject
General Materials Science,General Chemistry,General Engineering
Link
http://link.springer.com/content/pdf/10.1007/BF00903217.pdf
Reference31 articles.
1. W. M. Bullis: Solid-State Electron.9, 143 (1966)
2. J. L. Lambert: Wiss. Ber. AEG-Telefunken45, 153 (1972)
3. W. C. Dash: J. Appl. Phys.31, 2275 (1960)
4. W. R. Wilcox, T. J. LaChapelle: J. Appl. Phys.35, 240 (1964)
5. F. A. Huntley, A. F. W. Willoughby: Solid-State Electron.13, 1231 (1970)
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