Author:
Peletier L. A.,Troy W. C.
Abstract
We study the development of concentration profiles in a semi-infinite slab of semi-conductor material, in which impurities have been implanted at a high concentration. When the implant is uniform throughout the slab, no impurities can pass through the face of the slab, and the vacancy concentration at the surface is kept at its equilibrium value, it is shown that the density profiles of impurities, vacancies and host atoms may have self-similar form. The analysis is constructive and yields qualitative properties of the profiles and the front.
Publisher
Cambridge University Press (CUP)
Reference9 articles.
1. The effect of vacancy reduction on diffusion in semiconductors;Zahari;J. Phys.,1982
2. Self-similar solutions for diffusion in semiconductors
3. Self-similar solutions for infiltration of dopant into semiconductors
4. [M] Meere M. G. 1992 Nonlinear diffusion mechanisms in compound semiconductors. PhD Thesis, Nottingham University, UK.
5. The existence of axially symmetric flow above a rotating disk