Tensoresistance as an information source on mobility anisotropy parameter K = μ⊥/μ‖ in multivalley semiconductors and certain new possibilities of deformation metrology-Reference-Cited by-同舟云学术

Tensoresistance as an information source on mobility anisotropy parameter K = μ⊥/μ‖ in multivalley semiconductors and certain new possibilities of deformation metrology

Published:2015-03 Issue:2 Volume:51 Page:188-195
ISSN:1068-3755
Container-title:Surface Engineering and Applied Electrochemistry
language:en
Short-container-title:Surf. Engin. Appl.Electrochem.

Author:

Gaidar G. P.

Publisher

Allerton Press

Subject

Industrial and Manufacturing Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces

Link

http://link.springer.com/content/pdf/10.3103/S1068375515020039.pdf

Reference35 articles.

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2. Fedosov, A.V., Lun’ov, S.V., Korovits’kii, A.M., Fedosov, S.A., and Misiuk S.Ya. Influence of uniaxial elastic deformation of the location of deep energy levels in n-Si〈Ge〉 single crystals. Nauk. Visn. Volyn. Nats. Univ. im. Lesi Ukrainky, Fiz. Nauky, 2009, no. 18, pp. 8–11.

3. Fedosov, A.V., Zakharchuk, D.A., Fedosov, S.A., Koval’, Yu.V., Lun’ov, S.V., and Panasiuk, L.I., Influence of deep energy levels on electrical properties of n-Si single crystals, Nauk. Visn. Volyn. Nats. Univ. im. Lesi Ukrainky, Fiz. Nauky, 2008, no. 9, pp. 54–57.

4. Fedosov, S.A., Khvyshchun, M.V., and Shynkaruk, S.V., Influence of impurity concentration on the change of location of deep level E c — 0.2 eV under uniaxial elastic deformation in n-Ga〈Au〉, Nauk. Visn. Volyn. Nats. Univ. im. Lesi Ukrainky, Fiz. Nauky, 2010, no. 29, pp. 37–43.

5. Semeniuk, A.K., Radiatsiini efekty v bagatodolynnykh napivprovidnikakh (Radiation Effects in Multivalley Semiconductors), Lutsk: Nadstyr’ia, 2001.

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