Features of tensoresistance depending on the crystallographic orientation of γ -irradiated ( 60 Co) germanium and silicon single crystals-Reference-Cited by-同舟云学术

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Features of tensoresistance depending on the crystallographic orientation of γ -irradiated ( 60 Co) germanium and silicon single crystals

Published:2017-05 Issue: Volume:512 Page:6-11
ISSN:0921-4526
Container-title:Physica B: Condensed Matter
language:en
Short-container-title:Physica B: Condensed Matter

Author:

Gaidar G.P.,Baranskii P.I.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference47 articles.

1. Semiconductor Physics;Bonch-Bruevich,1977

2. Semiconductors;Smith,1978

3. Electronic Structures and the Properties of Solids;Harrison,1990

4. Introduction to Semiconductor Theory, English Translated from the Russian;Anselm,1982

5. Fundamentals of Semiconductors: physics and Materials Properties;Yu,2010

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Tensoelectric properties irradiated by the fast electrons n-Ge single crystals;Radiation Effects and Defects in Solids;2023-05-11

2. Tensoelectrical Properties of Electron-Irradiated N-Si Single Crystals;3;2021-09-28

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