Comment on ‘Comparison of excess 1/fnoise spectra in trimmed and untrimmed thick film resistors’
Author:
Publisher
Informa UK Limited
Subject
Electrical and Electronic Engineering
Link
http://www.tandfonline.com/doi/pdf/10.1080/00207210010013193
Reference9 articles.
1. Lattice scattering causes 1/ƒ noise
2. Comparison of excess 1/fnoise spectra in trimmed and untrimmed thick film resistors
3. Ulbrich, W. Resistor geometry comparison with respect to current noise and trim sensitivity. Proceedings of European Hybrid Micro-electronic Conference. Germany.
4. Vandamme, L. K. J. 1976.On 1/fnoise in ohmic contacts. PhD thesis, 80–88. TU Eindhoven.
5. Criteria of Low-Noise Thick-Film Resistors
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1. Experimental and modeling study of 1/f noise in multilayer MoS2 and MoSe2 field-effect transistors;Journal of Applied Physics;2020-09-07
2. CHARACTERIZATION OF CONTACT INTERFACE, FILM SHEET RESISTANCE AND 1/f NOISE WITH CIRCULAR CONTACTS;Fluctuation and Noise Letters;2011-12
3. 1/f noise in homogeneous and inhomogeneous media;IEE Proceedings - Circuits, Devices and Systems;2002-02-01
4. Current crowding and 1/f noise in polycrystalline silicon thin film transistors;Journal of Applied Physics;2001-10-15
5. Reply to 'Comment on ''Comparison of excess 1/f noise spectra in trimmed and untrimmed thick film resistors''';International Journal of Electronics;2001-03
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