Properties of reactively sputtered IrOxfor PZT electrode applications-Reference-Cited by-同舟云学术

Properties of reactively sputtered IrOxfor PZT electrode applications

Published:2000-11 Issue:1-4 Volume:31 Page:47-56
ISSN:1058-4587
Container-title:Integrated Ferroelectrics
language:en
Short-container-title:Integrated Ferroelectrics

Author:

Fox Glen R.¹,Sun Shan¹,Takamatsu Tomohiro²

Affiliation:

1. a Ramtron International Corporation , Colorado Springs, CO, 80921, USA

2. b Fujitsu Limited, ULSI Development Division , Iwate, Japan

Publisher

Informa UK Limited

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Ceramics and Composites,Control and Systems Engineering,Electronic, Optical and Magnetic Materials

Link

https://www.tandfonline.com/doi/pdf/10.1080/10584580008215639

Reference11 articles.

1. Preparation of Pb(Zr,Ti)O3thin films on electrodes including IrO2

2. Preparation ofPb(Zr,Ti)O3Thin Films on Ir andIrO2Electrodes

3. IrO2/Pb(ZrxTi1-x)O3(PZT)/Pt Ferroelectric Thin-Film Capacitors Resistant to Hydrogen-Annealing Damage

4. Westwood , W. D. 1989.Physics of Thin Films, Edited by: Francombe , M. H. and Vossen , J. L. Vol. 14, pp. 1–79. San Diego, CA: Academic Press, Inc.

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