Buffer layer dependence of memory effects for SrBi2Ta2O9 on Si-Reference-Cited by-同舟云学术

Buffer layer dependence of memory effects for SrBi2Ta2O9 on Si

Published:2001-02 Issue:1-4 Volume:34 Page:65-72
ISSN:1058-4587
Container-title:Integrated Ferroelectrics
language:en
Short-container-title:Integrated Ferroelectrics

Author:

Han J-P.¹,Guo X¹,Broadbridge C. C.¹²,Ma T. P.¹,Ils A.³,Cantoni M.³,Sallese J-M.³,Fazan P.³

Affiliation:

1. a Center for Microelectronic Materials and Structures, Yale University , New Haven, CT, 06520, USA

2. c Trinity college

3. b Center for Electron Microscopy, Swiss Federal Institute of Technology , CH-1015, Lausanne, Switzerland

Publisher

Informa UK Limited

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Ceramics and Composites,Control and Systems Engineering,Electronic, Optical and Magnetic Materials

Link

https://www.tandfonline.com/doi/pdf/10.1080/10584580108012875

Reference9 articles.

1. A new ferroelectric memory device, metal-ferroelectric-semiconductor transistor

2. Ferroelectric-gate transistor as a capacitor-less DRAM cell (FEDRAM)

3. Characteristics of Metal/Ferroelectric/Insulator/Semiconductor Field Effect Transistors Using a Pt/SrBi2Ta2O9/Y2O3/Si Structure

4. Memory window of Pt/SrBi2Ta2O9/CeO2/SiO2/Si structure for metal ferroelectric insulator semiconductor field effect transistor

5. Dielectric property of ferroelectric-insulator-semiconductor junction

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Fabrication and Properties of $\hbox{Pt}/\hbox{Bi}_{3.15}\hbox{Nd}_{0.85} \hbox{Ti}_{3}\hbox{O}_{12}/\break\hbox{HfO}_{2}/\hbox{Si}$ Structure for Ferroelectric DRAM (FEDRAM) FET;IEEE Electron Device Letters;2009-05

2. M/Bi3.4La0.6Ti3O12/I/Si capacitors for the application in FEDRAM;2007 International Workshop on Electron Devices and Semiconductor Technology (EDST);2007-06

3. Physics of thin-film ferroelectric oxides;Reviews of Modern Physics;2005-10-17

4. Influence of buffer layer thickness on memory effects of SrBi2Ta2O9∕SiN∕Si structures;Applied Physics Letters;2004-08-23

5. Ferroelectric DRAM (FEDRAM) FET with metal/SrBi/sub 2/Ta/sub 2/O/sub 9//SiN/Si gate structure;IEEE Electron Device Letters;2002-02