Buffer layer dependence of memory effects for SrBi2Ta2O9 on Si
Author:
Affiliation:
1. a Center for Microelectronic Materials and Structures, Yale University , New Haven, CT, 06520, USA
2. c Trinity college
3. b Center for Electron Microscopy, Swiss Federal Institute of Technology , CH-1015, Lausanne, Switzerland
Publisher
Informa UK Limited
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Ceramics and Composites,Control and Systems Engineering,Electronic, Optical and Magnetic Materials
Link
https://www.tandfonline.com/doi/pdf/10.1080/10584580108012875
Reference9 articles.
1. A new ferroelectric memory device, metal-ferroelectric-semiconductor transistor
2. Ferroelectric-gate transistor as a capacitor-less DRAM cell (FEDRAM)
3. Characteristics of Metal/Ferroelectric/Insulator/Semiconductor Field Effect Transistors Using a Pt/SrBi2Ta2O9/Y2O3/Si Structure
4. Memory window of Pt/SrBi2Ta2O9/CeO2/SiO2/Si structure for metal ferroelectric insulator semiconductor field effect transistor
5. Dielectric property of ferroelectric-insulator-semiconductor junction
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1. Fabrication and Properties of $\hbox{Pt}/\hbox{Bi}_{3.15}\hbox{Nd}_{0.85} \hbox{Ti}_{3}\hbox{O}_{12}/\break\hbox{HfO}_{2}/\hbox{Si}$ Structure for Ferroelectric DRAM (FEDRAM) FET;IEEE Electron Device Letters;2009-05
2. M/Bi3.4La0.6Ti3O12/I/Si capacitors for the application in FEDRAM;2007 International Workshop on Electron Devices and Semiconductor Technology (EDST);2007-06
3. Physics of thin-film ferroelectric oxides;Reviews of Modern Physics;2005-10-17
4. Influence of buffer layer thickness on memory effects of SrBi2Ta2O9∕SiN∕Si structures;Applied Physics Letters;2004-08-23
5. Ferroelectric DRAM (FEDRAM) FET with metal/SrBi/sub 2/Ta/sub 2/O/sub 9//SiN/Si gate structure;IEEE Electron Device Letters;2002-02
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