Influence of buffer layer thickness on memory effects of SrBi2Ta2O9∕SiN∕Si structures
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1771458
Reference17 articles.
1. A new ferroelectric memory device, metal-ferroelectric-semiconductor transistor
2. Ferroelectric DRAM (FEDRAM) FET with metal/SrBi/sub 2/Ta/sub 2/O/sub 9//SiN/Si gate structure
3. Buffer layer dependence of memory effects for SrBi2Ta2O9 on Si
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