A read-disturb-free ferroelectric gate fet memory-Reference-Cited by-同舟云学术

A read-disturb-free ferroelectric gate fet memory

Published:2001-02 Issue:1-4 Volume:34 Page:27-36
ISSN:1058-4587
Container-title:Integrated Ferroelectrics
language:en
Short-container-title:Integrated Ferroelectrics

Author:

Shimada Y.¹,Arita K.¹,Kato Y.¹,Uchiyama K.¹,Joshi V.²,Lim M.²

Affiliation:

1. a Semiconductor Device Research Center, Matsushita Electronics Corporation , Takatsuki, Osaka, 569-1193, Japan

2. b Symetrix Corporation , 5055 Mark Dabling Boulevard, Colorado Springs, CO, 809333-7150, USA

Publisher

Informa UK Limited

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Ceramics and Composites,Control and Systems Engineering,Electronic, Optical and Magnetic Materials

Link

https://www.tandfonline.com/doi/pdf/10.1080/10584580108012871

Reference8 articles.

1. Ferroelectric Memories

2. Ferroelectric Field Effect Transistor Based on Epitaxial Perovskite Heterostructures

3. Memory retention and switching behavior of metal-ferroelectric-semiconductor transistors

4. Memory effects of SrBi2Ta2O9 capacitor on silicon with a silicon nitride buffer

5. Analysis of memory retention characteristics of ferroelectric field effect transistors using a simple metal–ferroelectric–metal–insulator–semiconductor structure

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