Analysis of memory retention characteristics of ferroelectric field effect transistors using a simple metal–ferroelectric–metal–insulator–semiconductor structure-Reference-Cited by-同舟云学术

Analysis of memory retention characteristics of ferroelectric field effect transistors using a simple metal–ferroelectric–metal–insulator–semiconductor structure

Published:1999-05-15 Issue:10 Volume:85 Page:7471-7476
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Ashikaga Kinya,Ito Toshio

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.369381

Reference8 articles.

1. Study on ferroelectric thin films for application to NDRO non-volatile memories

2. Phase Transition, Stability, and Depolarization Field in Ferroelectric Thin Films

3. Thermodynamic Stability of the Spontaneous Polarization and the Space Charge Layer in Ferroelectric/Semiconductor Heterostructures

4. Memory Retention and Switching Speed of Ferroelectric Field Effect in(Pb,La)(Ti,Zr)O3/La2CuO4:SrHeterostructure

5. Effect of Annealing Method to Crystalize on Sr0.9Bi2.3Ta2O9+αThin Film Properties Formed from Alkoxide Solution

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