Weak Dependence of Voltage Amplification in a Semiconductor Channel on Strain State and Thickness of a Multidomain Ferroelectric in a Bilayer Gate-Reference-Cited by-同舟云学术

Weak Dependence of Voltage Amplification in a Semiconductor Channel on Strain State and Thickness of a Multidomain Ferroelectric in a Bilayer Gate

Published:2023-11-17 Issue:12 Volume:5 Page:6832-6841
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Misirlioglu Ibrahim Burc¹²^ORCID,Yapici Murat Kaya¹³,Sendur Kursat¹^ORCID,Okatan Mahmut Baris⁴^ORCID

Affiliation:

1. Faculty of Engineering and Natural Sciences, Sabanci University, Orhanli, Tuzla, 34956 Istanbul, Turkey

2. Center of Excellence for Functional Surfaces and Interfaces for Nano-Diagnostics (EFSUN), Sabanci University, Orhanli, Tuzla, 34956 Istanbul, Turkey

3. Nanotechnology Research and Application Center (SUNUM), Sabanci University, Tuzla, 34956 Istanbul, Turkey

4. Department of Materials Science and Engineering, Izmir Institute of Technology, Gulbahce/Urla, 35430 Izmir, Turkey

Funder

T?rkiye Bilimsel ve Teknolojik Arastirma Kurumu

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.3c01271

Reference47 articles.

1. Power consumption analysis of MOSFET and Single electron transistor for inverter circuit

2. Tunnel field-effect transistors as energy-efficient electronic switches

3. Integration of Ferroelectric Materials: An Ultimate Solution for Next-Generation Computing and Storage Devices

4. A Steep Slope MBE-Grown Thin p-Ge Channel FETs on Bulk Ge_-on-Si Using HZO Internal Voltage Amplification

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