A Steep Slope MBE-Grown Thin p-Ge Channel FETs on Bulk Ge<sub>-on-</sub>Si Using HZO Internal Voltage Amplification-Reference-Cited by-同舟云学术

A Steep Slope MBE-Grown Thin p-Ge Channel FETs on Bulk Ge_-on-Si Using HZO Internal Voltage Amplification

Published:2022-05 Issue:5 Volume:69 Page:2725-2731
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Choudhary Sumit¹^ORCID,Schwarz Daniel²^ORCID,Funk Hannes S.²^ORCID,Weishaupt D.²^ORCID,Khosla Robin²^ORCID,Sharma Satinder K.¹^ORCID,Schulze Jorg²^ORCID

Affiliation:

1. School of Computing and Electrical Engineering, IIT Mandi, Mandi, India

2. Institute of Semiconductor Engineering, University of Stuttgart, Stuttgart, Germany

Funder

Department of Science and Technology-German Academic Exchange Service

Visvesvaraya PhD Scheme, MeitY, Government of India

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/9761777/09751094.pdf?arnumber=9751094

Reference39 articles.

1. Nano-scaled Ge FinFETs with low temperature ferroelectric HfZrOx on specific interfacial layers exhibiting 65% S.S. Reduction and improved $\text{I}_{\text{ON}}$;su;Symp VLSI Technol Dig Tech Papers,2017

2. Ferroelectric HfZrOx Ge and GeSn PMOSFETs with sub-60 mV/decade subthreshold swing, negligible hysteresis, and improved $\text{I}_{\text{ds}}$;zhou;IEDM Tech Dig,2016

3. Direct and Indirect Band-to-Band Tunneling in Germanium-Based TFETs

4. Comparative Leakage Analysis of GeOI FinFET and Ge Bulk FinFET

5. Optimisation and scaling of interfacial GeO2 layers for high-κ gate stacks on germanium and extraction of dielectric constant of GeO2

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Fabrication and high photoresponse performance of a La-doped HfO2 thin film-based UV photodiode;Physica B: Condensed Matter;2024-10

2. Low-Temperature Processed Ni/GeSn Optimal Contacts for Junctionless GeSn_-on-Si FinFETs;IEEE Transactions on Electron Devices;2024-09

3. Performance and reliability assessment of source work function engineered charge plasma based Ti/HfO₂/Al₂O₃/Ge, double gate TFET;Engineering Research Express;2024-05-03

4. Beyond Moore's law – A critical review of advancements in negative capacitance field effect transistors: A revolution in next-generation electronics;Materials Science in Semiconductor Processing;2024-04

5. Influence of charge traps on charge plasma-germanium double-gate TFET for RF/Analog & low-power switching applications;Microelectronics Reliability;2024-02