Optimisation and scaling of interfacial GeO2 layers for high-κ gate stacks on germanium and extraction of dielectric constant of GeO2-Reference-Cited by-同舟云学术

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Optimisation and scaling of interfacial GeO2 layers for high-κ gate stacks on germanium and extraction of dielectric constant of GeO2

Published:2012-12 Issue: Volume:78 Page:136-140
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Murad S.N.A.,Baine P.T.,McNeill D.W.,Mitchell S.J.N.,Armstrong B.M.,Modreanu M.,Hughes G.,Chellappan R.K.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference22 articles.

1. Band offsets at the Ge/GeO2 interface through hybrid density functionals

2. Germanium-based technologies: from materials to devices;Houssa,2007

3. Passivation of Germanium Surfaces by a Quinhydrone–Methanol Solution Treatment

4. Germanium-based technologies: from materials to devices;Chui,2007

5. Impact of GeOx interfacial layer thickness on Al2O3/Ge MOS interface properties

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