Subject
Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials
Reference50 articles.
1. Ferroelectricity in hafnium oxide thin films;Boscke;Appl. Phys. Lett.,2011
2. Ferroelectric Hf0.5Zr0.5O2 thin films: a review of recent advances;Kim;Jom,2019
3. M.H. Lee, S.-T. Fan, C.-H. Tang, P.-G. Chen, J.-Y. Kuo et al., Physical thickness 1.x nm ferroelectric HfZrOx negative capacitance FETs, 2016 IEEE International Electron Devices Meeting (IEDM). (2016) 12.1.1–12.1.4.
4. J. Muller, T.S. Boscke, S. Muller, E. Yurchuk, P. Polakowski et al., Ferroelectric hafnium oxide: A CMOS-compatible and highly scalable approach to future ferroelectric memories, 2013 IEEE International Electron Devices Meeting. (2013) 10.8.1–10.8.4.
5. Interfacial charge-induced polarization switching in Al2O3 /Pb(Zr,Ti)O3 bi-layer;Park;J. Appl. Phys.,2015
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