NANOMIXED TiO2-Ga2O3THIN FILMS GROWN BY PLASMA ENHANCED ATOMIC LAYER DEPOSITION (PEALD) METHOD

Author:

LIU G. X.1,SHAN F. K.1,LEE W. J.1,LEE G. H.1,KIM I. S.1,SHIN B. C.1

Affiliation:

1. a Electronic Ceramics Center & Department of Nano Technology , DongEui University , Busan, 614-714, Korea

Publisher

Informa UK Limited

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Ceramics and Composites,Control and Systems Engineering,Electronic, Optical and Magnetic Materials

Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Recent advances in the growth of gallium oxide thin films employing various growth techniques—a review;Journal of Physics D: Applied Physics;2021-08-23

2. Effect of postdeposition annealing on the electrical properties of β-Ga2O3thin films grown onp-Si by plasma-enhanced atomic layer deposition;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2014-07

3. Electrical characteristics of β-Ga2O3 thin films grown by PEALD;Journal of Alloys and Compounds;2014-04

4. Low temperature deposition of Ga2O3 thin films using trimethylgallium and oxygen plasma;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2013-01

5. Plasma-Assisted Atomic Layer Deposition: Basics, Opportunities, and Challenges;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2011-09

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