Orientation Control of Metalorganic Chemical Vapor Deposition-Bi4Ti3O12Thin Film by Sequential Source Gas Supply Method-Reference-Cited by-同舟云学术

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Orientation Control of Metalorganic Chemical Vapor Deposition-Bi4Ti3O12Thin Film by Sequential Source Gas Supply Method

Published:2000-09-15 Issue:Part 1, No. 9A Volume:39 Page:5211-5216
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Watanabe Takayuki,Funakubo Hiroshi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 27 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Atomic vapor deposition of bismuth titanate thin films;Journal of Applied Physics;2013-05-14

2. Polarization switching and relaxation dynamics of bismuth layered ferroelectric thin films: Role of oxygen defect sites and crystallinity;Physical Review B;2011-09-22

3. Application of synchrotron-based reciprocal-space mapping at a fixed angular position to identification of crystal symmetry of Bi4Ti3O12epitaxial thin films;Journal of Applied Crystallography;2011-02-22

4. Ferroelectric Property of Bi3TiTaO9Based Ceramics with Nd Substitution;Ferroelectrics;2007-09-24

5. Structural and Ferroelectric Properties of Bi4Ti3O12/TiO2 Thin Films Prepared by Two-Dimensional RF Magnetron Sputtering;Transactions of the Materials Research Society of Japan;2007

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