Low temperature deposition of Ga2O3 thin films using trimethylgallium and oxygen plasma-Reference-Cited by-同舟云学术

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Low temperature deposition of Ga2O3 thin films using trimethylgallium and oxygen plasma

Published:2013-01 Issue:1 Volume:31 Page:01A110
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
language:en
Short-container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

Author:

Donmez Inci,Ozgit-Akgun Cagla,Biyikli Necmi

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/pdf/10.1116/1.4758782

Cited by 68 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. High-throughput thermodynamic analysis of epitaxial growth of β-Ga2O3 by the chemical vapor deposition method from TMGa-H2O system;Materials Today Communications;2024-03

2. Investigation on the Mist Intensity to Deposit Gallium Oxide Thin Films by Mist Chemical Vapor Deposition;physica status solidi (RRL) – Rapid Research Letters;2023-11-07

3. Atomic Layer Deposition of Ga₂O₃ from GaI₃ and O₃: Growth of High-Density Phases;Crystal Growth & Design;2023-07-13

4. Ga2O3/Ag/Ga2O3-Laminated Film Fabricated at Room Temperature: Toward Applications in Ultraviolet Transparent Highly Conductive Electrodes;Crystals;2023-06-27

5. Atomic Layer Deposition of Ultra-Thin Crystalline Electron Channels for Heterointerface Polarization at Two-Dimensional Metal-Semiconductor Heterojunctions;Coatings;2023-06-03

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