Electron microscope observations of precipitation in boron implanted silicon
Author:
Publisher
Informa UK Limited
Subject
General Engineering
Link
http://www.tandfonline.com/doi/pdf/10.1080/00337577508235401
Reference6 articles.
1. Observation of ion bombardment damage in silicon
2. Damage produced by ion mplantation in silicon
3. Correlation of electron microscope studies with the electrical properties of boron implanted silicon
4. On the annealing of damage produced by boron ion implantation of silicon single crystals
5. Method of preparing Si and Ge specimens for examination by transmission electron microscopy
Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Ion Implantation for Very Large Scale Integration;Advances in Electronics and Electron Physics Volume 58;1982
2. Ion Implantation;Large Scale Integrated Circuits Technology: State of the Art and Prospects;1982
3. Use of a scanning cw Kr laser to obtain diffusion‐free annealing of B‐implanted silicon;Applied Physics Letters;1978-09
4. An electron microscopy study of defect structures in recrystallized amorphous layers of self-ion-irradiated 〈111〉 silicon;Philosophical Magazine A;1978-05
5. Electron microscope study of stackingfault formation in boron implanted silicon;Radiation Effects;1978-01
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